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參數(shù)資料
| 型號： | MJE13001-AP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MJE13001-AP |
MJE13001
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.0Watts of Power Dissipation.
Collector-current 0.2A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
600
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
7.0
Vdc
ICBO
Collector Cutoff Current
(VCB=600Vdc, IE=0)
100
uAdc
ICEO
Collector Cutoff Current
(VCE=400Vdc,IB=0)
200
uAdc
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=20mAdc, VCE=20Vdc)
10
40
hFE(2)
DC Current Gain
(IC=0.25mAdc, VCE=10Vdc)
5.0
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=50mAdc, IB=10mAdc)
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=50mAdc, IB=10mAdc)
1.2
Vdc
VBE
Base-Emitter Voltage
(IE=100mAdc)
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Trans istor Frequency
(IC=20mAdc, VCE=20Vdc, f=1.0MHz)
8.0
MHz
tF
Fall Time
0.3
uS
tS
Storage Time
VCC=45V,IC=50mA
IB1=IB2=5.0mA
1.5
uS
TO-92
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
AE
B
C
D
G
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 4
2008/02/01
1
2
3
1.BASE
3.EMITTER
2.COLLECTOR
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Marking
: 13001
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13001-BP | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001L-L-T92-B | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001L-J-T92-K | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001L-J-T92-B | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MJE13001L-G-T92-K | 200 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13001G-X-X-AB3-A-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-AB3-F-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001G-X-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13001-X-X-AB3-A -R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
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