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參數(shù)資料
| 型號(hào)： | MJD6039T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | MJD6039T4 |
MJD6039
http://onsemi.com
3
I C
,COLLECT
OR
CURRENT
(AMPS)
Figure 3. Thermal Response
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
r(t)
,EFFECTIVE
TRANSIENT
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL
RESIST
ANCE
(NORMALIZED)
0.7
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIM
IT
10
50
2
0.1ms
dc
0.1
1
3
7
10
0.5
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
50
100
200 300
500
30
20
70
0.2
SINGLE
PULSE
D = 0.5
0.05
25
T, TEMPERATURE (
°C)
0
50
75
100
125
150
20
15
10
5
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
2.5
0
2
1.5
1
0.5
TA
TC
TA
SURFACE
MOUNT
0.7
1ms
5ms
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
35
7
0.1
0.01
0.05
0.5ms
TC
TYPICAL ELECTRICAL CHARACTERISTICS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
C,
CAP
ACIT
ANCE
(pF)
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25°C
200
10
50
70
100
0.1
2
6
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
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