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參數(shù)資料
| 型號： | MJD6036 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MJD6036 |
MJD6036 MJD6039
http://onsemi.com
3
I C
,COLLECT
OR
CURRENT
(AMPS)
Figure 3. Thermal Response
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
r(t)
,EFFECTIVE
TRANSIENT
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL
RESIST
ANCE
(NORMALIZED)
0.7
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIM
IT
10
50
2
0.1ms
dc
0.1
1
3
7
10
0.5
0.1
0.03
0.02
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
20
50
100
200 300 500
30
20
70
0.2
SINGLE
PULSE
D = 0.5
0.05
25
T, TEMPERATURE (°C)
0
50
75
100
125
150
20
15
10
5
P D
,POWER
DISSIP
ATION
(W
ATTS)
2.5
0
2
1.5
1
0.5
TA TC
TA
SURFACE
MOUNT
0.7
1ms
5ms
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
35
7
0.1
0.01
0.05
0.5ms
TC
TYPICAL ELECTRICAL CHARACTERISTICS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150
_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C,
CAP
ACIT
ANCE
(pF)
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25°C
200
10
50
70
100
0.1
2
6
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD6036-1 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6036T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD6039-1 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD6036-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6036T4 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Power Transistors |
| MJD6039-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | 功能描述:達(dá)林頓晶體管 2A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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