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參數(shù)資料
| 型號(hào)： | MJD6036T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MJD6036T4 |
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, convertors,
and power amplifiers.
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Available on 16 mm Tape and Reel for Automatic Handling
(“T4” Suffix)
Surface Mount Replacements for 2N6034–2N6039 Series
Monolithic Construction With Built–in Base–Emitter Shunt Resistors
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating
Symbol
MJD6036
MJD6039
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Collector–Base Voltage
VCB
80
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
4
8
Adc
Base Current
IB
100
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
20
0.16
Watts
W/
_C
Total Power Dissipation (1) @ TA = 25_C
Derate above 25
_C
PD
1.75
0.014
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
6.25
_C/W
Thermal Resistance, Junction to Ambient (1)
RθJA
71.4
_C/W
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
1
Publication Order Number:
MJD6036/D
MJD6036
MJD6039
CASE 369A–13
SILICON
POWER TRANSISTORS
4 AMPERES
80 VOLTS
20 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243 6.172
0.063 1.6
0.1
18
3.0
0.07 1.8
0.165 4.191
0.190 4.826
inches
mm
NPN
PNP
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PDF描述 |
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| MJD6039T4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD6039 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD6039-1 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD907 | 3000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD6039 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Power Transistors |
| MJD6039-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
| MJD6039T4 | 功能描述:達(dá)林頓晶體管 2A 80V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD6039T4G | 功能描述:達(dá)林頓晶體管 2A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD61865501 | 制造商:LG Corporation 功能描述:Strap,Head |
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