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參數(shù)資料
| 型號： | MJD45H11T4 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 152K |
| 代理商： | MJD45H11T4 |
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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MJD44H11 / MJD45H11
5/5
相關PDF資料 |
PDF描述 |
|---|---|
| MJD45H11-T1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11-I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD47T4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD47 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD45H11-T4 | 制造商:STMicroelectronics 功能描述: |
| MJD45H11T4-A | 制造商:STMicroelectronics 功能描述: |
| MJD45H11T4G | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD45H11T4G | 制造商:ON Semiconductor 功能描述:POWER TRANSISTOR PNP -80V D-PAK |
| MJD45H11T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252 |
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