參數(shù)資料
型號: MJD45H11T4
廠商: STMICROELECTRONICS
元件分類: 功率晶體管
英文描述: 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252
文件頁數(shù): 1/5頁
文件大?。?/td> 152K
代理商: MJD45H11T4
MJD44H11
MJD45H11
COMPLEMENTARY SILICON PNP TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
s
FAST SWITCHING SPEED
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The MJD44H11 is a Silicon Multiepitaxial Planar
NPN
transistor
mounted
in
DPAK
plastic
package.
It is inteded for various switching and general
purpose applications.
The complementary PNP type is MJD45H11
INTERNAL SCHEMATIC DIAGRAM
May 2003
1
3
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJD44H11
PNP
MJD45H11
VCEO
Collector-Emitter Voltage (IB = 0)
80
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current
16
A
Ptot
Total Dissipation at Tc
≤ 25 oC
20
W
Tstg
Storage Temperature
-55 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
For PNP types the values are intented negative.
1/5
相關(guān)PDF資料
PDF描述
MJD45H11-T1 8 A, 80 V, PNP, Si, POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD45H11-T4 制造商:STMicroelectronics 功能描述:
MJD45H11T4-A 制造商:STMicroelectronics 功能描述:
MJD45H11T4G 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD45H11T4G 制造商:ON Semiconductor 功能描述:POWER TRANSISTOR PNP -80V D-PAK
MJD45H11T4G-CUT TAPE 制造商:ON 功能描述:MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252