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參數(shù)資料
| 型號(hào)： | MJD45H11 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | MJD45H11 |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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MJD44H11 / MJD45H11
5/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD45H11T4 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD45H11-T1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11-I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD47T4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD45H11_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| MJD45H11-001 | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD45H11-001G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD45H11-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
| MJD45H11-1G | 功能描述:兩極晶體管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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