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參數(shù)資料
| 型號： | MJD42C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors |
| 中文描述： | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 195K |
| 代理商： | MJD42C |
4
Motorola Bipolar Power Transistor Device Data
C
V
t, TIME (ms)
0.01
0.01
0.05
1
2
5
10
20
50
100
200
500
0.1
0.5
0.2
1000
0.03
0.3
3
30
300
0.02
2.5 A
Figure 7. Collector Saturation Region
IB, BASE CURRENT (mA)
1.2
0.4
0
10
2
0.8
TJ = 25
°
C
1.6
IC = 1 A
Figure 8. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Cob
0.5
50
2
5
20
50
1
0.2
0.1
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
R
Figure 9. Thermal Response
0.5
D = 0.5
5 A
1000
500
300
200
100
50
30
20
300
30
70
100
200
1
3
10
30
0.05
0.3
0.7
0.03
0.02
0.1
0.02
0.01
TJ = 25
°
C
Cib
I
10
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
100
1
0.3
3
2
0.1
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
Figure 10. Maximum Forward Bias
Safe Operating Area
TC = 25
°
C SINGLE PULSE
TJ = 150
°
C
dc
0.5
5
1 ms
MJD41C, 42C
50
30
20
10
7
5
3
2
1
0.05
100
μ
s
5 ms
500
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJD42C1 | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42C-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS |
| MJD42C1G | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CG | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CRL | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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