參數(shù)資料
型號(hào)： MJD340-1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR
封裝： CASE 369-07, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 98K
代理商： MJD340-1
High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular MJE340 and MJE350
300 V (Min) — V
CEO(sus)
0.5 A Rated Collector Current
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
300
Vdc
Collector–Base Voltage
VCB
300
Vdc
Emitter–Base Voltage
VEB
3
Vdc
Collector Current — Continuous
— Peak
IC
0.5
0.75
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/
_C
Total Power Dissipation* @ TA = 25_C
Derate above 25
_C
PD
1.56
0.012
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.33
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
80
_C/W
Lead Temperature for Soldering Purpose
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 1 mAdc, IB = 0)
VCEO(sus)
300
—
Vdc
Collector Cutoff Current (VCB = 300 Vdc, IE =
0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current (VBE = 3 Vdc, IC = 0)
IEBO
—
0.1
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
—
*When surface mounted on minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
MJD340/D
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS
15 WATTS
*ON Semiconductor Preferred Device
MJD340
MJD350
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
*
NPN
PNP
*
CASE 369A–13
CASE 369–07
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
相關(guān)PDF資料
PDF描述
MJD350I 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD340-13 功能描述:兩極晶體管 - BJT HIGH VOLTAGE NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD340G 功能描述:兩極晶體管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD340G 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR
MJD340RL 功能描述:兩極晶體管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD340RLG 功能描述:兩極晶體管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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