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參數(shù)資料
| 型號： | MJD200TF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MJD200TF |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD200
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
8
V
IB
Base Current
1
A
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
10
A
PC
Collector Dissipation (TC = 25°C)
12.5
W
Collector Dissipation (Ta = 25°C)
1.4
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCBO(sus)
* Collector Emitter Sustaining Voltage
IC=100mA, IB=0
25
V
ICEO
Collector Cut-off Current
VCB=40V, IE=0
100
nA
ICBO
Collector Cut-off Current
VEBO=8V, IC=0
100
nA
IEBO
Emitter Cut-off Current
VCE=1V, IC=500mA
70
hFE
* DC Current Gain
VCE=1V, IC=2A
VCE=2V, IC=5A
45
10
180
VCE (sat)
* Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
IC=2A, IB=200mA
IC=5A, IB=1A
0.3
0.75
1.8
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC=5A, IB=2A
2.5
V
VBE (on)
* Base-Emitter ON Voltage
VCE=1V, IC=2A
1.6
V
fT
Current Gain Bandwidth Product
VCE=10V, IC=100mA
65
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=0.1MHz
80
pF
MJD200
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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| MJD210-1 | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
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| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD210 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD210G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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