參數(shù)資料
型號(hào): MJD200
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: D-PAK for Surface Mount Applications
中文描述: 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 236K
代理商: MJD200
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MJD200/D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD200_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors
MJD200_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors
MJD200-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MJD200G 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD200G 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR