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參數(shù)資料
| 型號： | MJD200 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | D-PAK for Surface Mount Applications |
| 中文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 236K |
| 代理商： | MJD200 |
3
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
h
Figure 5. DC Current Gain
Figure 6. “On” Voltage
IC, COLLECTOR CURRENT (AMP)
200
400
0.07 0.1
0.3
5
0.05
100
80
60
40
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 7. Temperature Coefficients
20
0.7
1
3
2
0.5
25
°
C
TJ = 150
°
C
–55
°
C
2
0.05
IC, COLLECTOR CURRENT (AMP)
5
1.6
1.2
0.8
0.4
0
3
2
0.07
0.2
0.1
0.5
0.3
1
0.7
TJ = 25
°
C
V
NPN
MJD200
PNP
MJD210
VCE = 1 V
VCE = 2 V
5
0.05
3
200
400
100
80
60
40
20
h
25
°
C
TJ = 150
°
C
–55
°
C
VCE = 1 V
VCE = 2 V
V
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
θ
VC for VCE(sat)
θ
VB for VBE
2
0.05
1.6
1.2
0.8
0.4
0
3
2
0.07
0.2
0.1
0.5
0.3
1
0.7
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
V
θ
°
+2.5
+2
+1.5
+1
0
–0.5
–1
–1.5
–2
+0.5
–2.5
0.07 0.1
0.3
5
0.05
0.2
0.7
1
3
2
0.5
*APPLIES FOR IC/IB
≤
hFE/3
25
°
C to 150
°
C
–55
°
C to 25
°
C
25
°
C to 150
°
C
–55
°
C to 25
°
C
V
θ
°
+2.5
+2
+1.5
+1
0
–0.5
–1
–1.5
–2
+0.5
–2.5
0.07 0.1
0.3
5
0.05
0.2
0.7
1
3
2
0.5
5
0.07 0.1
0.3
0.2
0.7
1
2
0.5
*APPLIES FOR IC/IB
≤
hFE/3
*
θ
VC for VCE(sat)
θ
VB for VBE
25
°
C to 150
°
C
–55
°
C to 25
°
C
25
°
C to 150
°
C
–55
°
C to 25
°
C
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| MJD200_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
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| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
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