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參數(shù)資料
| 型號： | MJD200 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | D-PAK for Surface Mount Applications |
| 中文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 236K |
| 代理商： | MJD200 |
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain (1)
(IC = 2 Adc, VCE = 1 Vdc)
(IC = 5 Adc, VCE = 2 Vdc)
Collector–Emitter Saturation Voltage (1)
(IC = 5 Adc, IB = 1 Adc)
hFE
VCE(sat)
10
—
—
—
0.3
1.8
—
Vdc
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(2) fT =
hfe
ftest.
Cob
—
80
pF
MJD200
25
25
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
15
10
TC
5
20
P
Figure 2. Switching Time Test Circuit
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
30
20
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25
°
C
t
500
300
200
100
50
30
20
td
10
5
3
2
2.5
0
1.5
1
TA
0.5
2
1
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
Figure 3. Turn–On Time
Figure 4. Turn–Off Time
+11 V
25
μ
s
0
–9 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
TC
TA (SURFACE MOUNT)
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
t
5
2
1
3
tr
MJD200
MJD210
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
5
2
1
3
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
ts
tf
MJD200
MJD210
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| MJD200_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
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| MJD200G | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
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