參數(shù)資料
型號(hào)： MJD18002D2-1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： CASE 369-07, DPAK-3
文件頁(yè)數(shù)： 9/16頁(yè)
文件大小： 142K
代理商： MJD18002D2-1
MJD18002D2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
570
–
Vdc
Collector–Base Breakdown Voltage (ICBO = 1 mA)
VCBO
1000
1100
–
Vdc
Emitter–Base Breakdown Voltage (IEBO = 1 mA)
VEBO
11
14
–
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
–
–
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
–
–
100
500
100
Adc
Emitter–Cutoff Current (VEB = 10 Vdc, IC = 0)
IEBO
–
–
500
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 25°C
VBE(sat)
–
0.78
0.87
1.0
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
–
0.36
0.50
0.6
1.0
Vdc
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 125°C
–
0.40
0.65
0.75
1.2
DC Current Gain
(IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
14
8.0
25
15
–
–
(IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 25°C
@ TC = 125°C
6.0
4.0
10
6.0
–
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
ft
–
13
–
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
–
50
100
pF
Input Capacitance (VEB = 8 Vdc)
Cib
–
340
500
pF
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1.0 Adc)
@ TC = 25°C
VEC
–
1.2
1.5
Vdc
(IEC = 0.4 Adc)
@ TC = 25°C
–
1.0
1.3
@ TC = 125°C
–
0.6
–
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/s)
@ TC = 25°C
tfr
–
517
–
ns
(IF = 1.0 Adc, di/dt = 10 A/s)
@ TC = 25°C
–
480
–
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