參數(shù)資料
型號(hào)： MJD32-1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3 A, 40 V, PNP, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 369-07, 3 PIN
文件頁(yè)數(shù)： 1/61頁(yè)
文件大?。?/td> 394K
代理商： MJD32-1
3–542
Motorola Bipolar Power Transistor Device Data
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
Rating
Symbol
MJD31
MJD32
MJD31C
MJD32C
Unit
Collector–Emitter Voltage
VCEO
40
100
Vdc
Collector–Base Voltage
VCB
40
100
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
15
0.12
Watts
W/
_C
Total Power Dissipation* @ TA = 25_C
Derate above 25
_C
PD
1.56
0.012
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
8.3
_C/W
Thermal Resistance, Junction to Ambient*
R
θJA
80
_C/W
Lead Temperature for Soldering Purposes
TL
260
_C
* These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJD31,C
MJD32,C
CASE 369A–13
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.243
6.172
0.063
1.6
0.1
18
3.0
0.07
1.8
0.165
4.191
0.190
4.826
inches
mm
*
NPN
PNP
*
REV 1
相關(guān)PDF資料
PDF描述
MJE13005BU 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005BD 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AN 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AJ 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AF 4 A, 400 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD32B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJD32BT4 功能描述:兩極晶體管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32BTF 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32C 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD32C1 功能描述:兩極晶體管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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