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參數(shù)資料
| 型號： | MJD18002D2-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | CASE 369-07, DPAK-3 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | MJD18002D2-1 |
MJD18002D2
http://onsemi.com
6
Typical Switching Characteristics
Figure 13. Resistive Switch Time, toff
IC, COLLECTOR CURRENT (AMPS)
5.5
1.6
1
0.7
0.4
0.1
Figure 14. Inductive Storage Time, tsi @ IC/IB = 5
1.5
t,
TIME
(
m
s)
Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5
IC, COLLECTOR CURRENT (AMPS)
700
100
1.5
1
0.5
0
Figure 16. Inductive Storage Time
0
t,
TIME
(
m
s)
hFE, FORCED GAIN
15
9
6
3
t,
TIME
(
m
s)
0
Figure 17. Inductive Fall Time
hFE, FORCED GAIN
15
5
3
0
t fi
,F
ALL
TIME
(ns)
hFE, FORCED GAIN
1800
15
6
3
0
t,
TIME
(
m
s)
600
Figure 18. Inductive Cross–Over Time
1000
2.5
3.0
3.5
4.0
4.5
5.0
12
1
2
3
4
300
500
11
200
400
600
12
9
IBon = IBoff
VCC = 300 V
PW = 40
ms
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
1200
TJ = 125°C
TJ = 25°C
IC/IB = 5
IC/IB = 10
1.3
2.0
IC, COLLECTOR CURRENT (AMPS)
3
1.5
1
0.5
0
1
t,
TIME
(
m
s)
2
2.5
TJ = 125°C
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
TJ = 25°C
200
400
600
TJ = 125°C
TJ = 25°C
IC/IBon = 5
tfi
tc
TJ = 125°C
TJ = 25°C
IC = 300 mA
IC = 1 A
TJ = 125°C
TJ = 25°C
9
713
800
IC = 1 A
IC = 0.3 A
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IC = 1 A
IC = 0.3 A
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| MJD18002D2T4 | 功能描述:兩極晶體管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD18002D2T4G | 功能描述:兩極晶體管 - BJT BIP NPN 2A 450V TR F RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200 | 功能描述:兩極晶體管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD200_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
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