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參數(shù)資料
| 型號(hào)： | MJB18004D2T4 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 15/16頁(yè) |
| 文件大?。?/td> | 222K |
| 代理商： | MJB18004D2T4 |
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MJB18004D2T4
http://onsemi.com
8
,ST
ORAGE
TIME
(
t si
s)
TYPICAL SWITCHING CHARACTERISTICS
Figure 19. Inductive Switching, tc @ IC/IB = 10
1600
800
0
4
2
0
IC, COLLECTOR CURRENT (AMPS)
t,TIME
(ns)
1200
TJ = 125°C
TJ = 25°C
400
13
IC/IB = 10
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 H
Figure 20. Inductive Storage Time
5
2
20
0
hFE, FORCED GAIN
4
3
510
15
TJ = 125°C
TJ = 25°C
IC = 2 A
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 1 A
Figure 21. Inductive Fall Time
1000
0
20
8
2
hFE, FORCED GAIN
Figure 22. Inductive Crossover Time
2000
500
0
20
8
2
hFE, FORCED GAIN
1500
1000
600
t fi
,F
ALL
TIME
(ns)
t c
,CROSSOVER
TIME
(ns)
800
400
200
4
6
10
12
TJ = 125°C
TJ = 25°C
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 H
14
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 H
TJ = 125°C
TJ = 25°C
14
16
18
IC = 1 A
IC = 2 A
IC = 1 A
Figure 23. Inductive Storage Time, tsi
4
2
1
4
0.5
IC, COLLECTOR CURRENT (AMPS)
1.5
1
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 H
3
t,TIME
(s)
2
2.5
3
3.5
IB = 50 mA
IB = 100 mA
IB = 200 mA
IB = 500 mA IB = 1 A
Figure 24. Forward Recovery Time, TFR
420
300
2
1
0.5
0
IF, FORWARD CURRENT (AMP)
dI/dt = 10 A/s
TC = 25°C
1.5
t fr
,FOR
W
ARD
RECOVER
Y
TIME
(ns)
380
340
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