參數(shù)資料
型號: MJB18004D2T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: D2PAK-3
文件頁數(shù): 14/16頁
文件大?。?/td> 222K
代理商: MJB18004D2T4
MJB18004D2T4
http://onsemi.com
7
TYPICAL SWITCHING CHARACTERISTICS
Figure 13. Resistive Switch Time, ton
3200
0
4
2
1
IC, COLLECTOR CURRENT (AMPS)
3
t,TIME
(ns)
2400
1600
800
TJ = 125°C
TJ = 25°C
IC/IB = 10
IC/IB = 5
IBon = IBoff
VCC = 300 V
PW = 20 s
Figure 14. Resistive Switch Time, toff
5
2
0
4
3
1
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
tsi @ IC/IB = 5
4
2
0
4
1
0
IC, COLLECTOR CURRENT (AMPS)
3
1
3
t,TIME
(s)
t,TIME
(s)
4
1
TJ = 125°C
TJ = 25°C
IC/IB = 10
IC/IB = 5
IBon = IBoff
VCC = 300 V
PW = 20 s
2
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 H
Figure 16. Inductive Storage Time,
tsi @ IC/IB = 10
2
IC/IB = 5
4
2
0
4
1
0
IC, COLLECTOR CURRENT (AMPS)
3
1
t,TIME
(s)
2
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 H
IC/IB = 10
Figure 17. Inductive Switching Time,
tc and tfi @ IC/IB = 5
1000
0
4
1
0
IC, COLLECTOR CURRENT (AMPS)
3
t,TIME
(ns)
800
600
200
TJ = 125°C
TJ = 25°C
400
2
IBon = IBoff
VCC = 15 V
VZ = 300 V
LC = 200 H
IC/IB = 5
Figure 18. Inductive Switching Time,
tfi @ IC/IB = 10
1000
0
4
1
0
IC, COLLECTOR CURRENT (AMPS)
3
t,TIME
(ns)
800
600
200
TJ = 125°C
TJ = 25°C
400
2
IBoff = IBon
VCC = 15 V
VZ = 300 V
LC = 200 H
IC/IB = 10
tc
tfi
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