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參數(shù)資料
| 型號： | MJB18004D2T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 222K |
| 代理商： | MJB18004D2T4 |
MJB18004D2T4
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
@ TC = 125°C
VEC
0.96
0.72
1.5
V
(IEC = 2 Adc)
@ TC = 25°C
@ TC = 125°C
1.15
0.8
1.7
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/s)
@ TC = 25°C
tfr
440
ns
(IF = 1 Adc, di/dt = 10 A/s)
@ TC = 25°C
335
(IF = 2 Adc, di/dt = 10 A/s)
@ TC = 25°C
335
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance
CB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
60
100
pF
Input Capacitance
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Cib
450
750
pF
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 40 s)
Turn–on Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 = 1 Adc
@ T= 25°C
ton
500
750
ns
Turn–off Time
IB2 = 1 Adc
VCC = 250 Vdc
@ TC = 25°C
toff
1.1
1.4
s
Turn–on Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
@ TC = 25°C
@ TC = 125°C
ton
100
150
150
ns
Turn–off Time
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
1.15
1.6
1.3
s
Turn–on Time
IC = 2.5 Adc, IB1 = 0.5 Adc
IB2 =05Adc
@ TC = 25°C
@ TC = 125°C
ton
120
500
150
ns
Turn–off Time
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
1.85
2.6
2.15
s
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)
Fall Time
IC = 2.5 Adc
I
500
Ad
@ TC = 25°C
@ TC = 125°C
tf
130
300
175
ns
Storage Time
C
IB1 = 500 mAdc
IB2 = 500 mAdc
VZ = 350 V
@ TC = 25°C
@ TC = 125°C
ts
2.12
2.6
2.4
s
Crossover Time
VZ = 350 V
LC = 300 H
@ TC = 25°C
@ TC = 125°C
tc
355
750
500
ns
Fall Time
IC = 2 Adc
I
400
Ad
@ TC = 25°C
@ TC = 125°C
tf
95
230
150
ns
Storage Time
C
IB1 = 400 mAdc
IB2 = 400 mAdc
VZ = 300 V
@ TC = 25°C
@ TC = 125°C
ts
2.1
2.9
2.4
s
Crossover Time
VZ = 300 V
LC = 200 H
@ TC = 25°C
@ TC = 125°C
tc
300
700
450
ns
Fall Time
IC = 1 Adc
I
100
Ad
@ TC = 25°C
@ TC = 125°C
tf
70
100
90
ns
Storage Time
C
IB1 = 100 mAdc
IB2 = 500 mAdc
VZ = 300 V
@ TC = 25°C
@ TC = 125°C
ts
0.7
1.05
0.9
s
Crossover Time
VZ = 300 V
LC = 200 H
@ TC = 25°C
@ TC = 125°C
tc
75
160
120
ns
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