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參數(shù)資料
| 型號： | MIXA80WB1200TEH |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 120 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 564K |
| 代理商： | MIXA80WB1200TEH |
2010 IXYS All rights reserved
3 - 8
20100629c
MIXA80WB1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Brake T7
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
CES
collector emitter voltage
T
VJ =
25°C
1200
V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
I
C25
I
C80
collector current
T
C =
25°C
T
C =
80°C
60
40
A
P
tot
total power dissipation
T
C =
25°C
195
W
V
CE(sat)
collector emitter saturation voltage
I
C = 35 A; VGE = 15 V
T
VJ =
25°C
T
VJ = 125°C
1.8
2.1
V
V
GE(th)
gate emitter threshold voltage
I
C = 1.5 mA; VGE = VCE
T
VJ =
25°C
5.4
6.0
6.5
V
I
CES
collector emitter leakage current
V
CE = VCES; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
0.01
0.1
mA
I
GES
gate emitter leakage current
V
GE = ±20 V
500
nA
Q
G(on)
total gate charge
V
CE = 600 V; VGE = 15 V; IC = 35 A
107
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
T
VJ = 125°C
V
CE = 600 V; IC = 35 A
V
GE = ±15 V; RG = 27 W
70
40
250
100
3.8
4.1
ns
mJ
RBSOA
reverse bias safe operating area
V
GE = ±15 V; RG = 27 W;
T
VJ = 125°C
V
CEK = 1200 V
105
A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE = 900 V; VGE = ±15 V;
T
VJ = 125°C
R
G = 27 W; non-repetitive
140
10
s
A
R
thJC
thermal resistance junction to case
0.64
K/W
Brake Chopper D7
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitive reverse voltage
T
VJ =
25°C
1200
V
I
F25
I
F80
forward current
T
C =
25°C
T
C =
80°C
44
29
A
V
F
forward voltage
I
F = 30 A; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
1.95
2.2
V
I
R
reverse current
V
R = VRRM
T
VJ =
25°C
T
VJ = 125°C
0.01
0.15
0.1
mA
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R = 600 V
di
F /dt = 600 A/s
T
VJ = 125°C
I
F = 30 A; VGE = 0 V
3.5
30
350
0.9
C
A
ns
mJ
R
thJC
thermal resistance junction to case
1.2
K/W
T
C = 25°C unless otherwise stated
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