參數(shù)資料
型號(hào): MIG75J6CSB1W
廠商: Toshiba Corporation
英文描述: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
中文描述: 東芝智能功率模塊IGBT的硅?頻道
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 182K
代理商: MIG75J6CSB1W
MIG75J6CSB1W
2002-08-26
9
T
t
/
W
C
C
Case temperature T
C
(°C)
OC – T
C
O
O
Carrier frequency f
c
(kHz)
I
D (H)
– f
c
H
D
Carrier frequency f
c
(kHz)
I
D (L)
– f
c
L
D
Collector-emitter voltage V
CE
(V)
Reverse bias SOA
Pulse width tw (s)
R
th (t)
– tw Inverter stage
OC
140
0
0
200
600
120
80
60
40
400
Tj
VD 15 V
125°C
100
20
100
300
500
700
30
0
0
5
15
25
15
20
10
25
10
5
20
VD 15 V
Tj 25°C
1
0.001
0.001
0.01
1
0.003
0.1
0.01
0.005
0.03
0.1
0.05
0.3
0.5
10
Tc 25°C
Diode
Transisto
300
0
0
25
75
150
100
200
50
100
125
VD 15 V
Inverter stage
100
0
0
5
15
25
50
10
90
30
10
20
70
80
60
40
20
VD 15 V
Tj 25°C
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