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參數(shù)資料
| 型號： | MIG75J6CSB1W |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MIG75J6CSB1W |
MIG75J6CSB1W
2002-08-26
4
Maximum Ratings
(T
j
25°C)
Stage
Characteristics
Condition
Symbol
Ratings
Unit
Supply voltage
P-N power terminal
V
CC
450
V
Collector-emitter voltage
V
CES
600
V
Collector current
Tc 25°C, DC
I
C
75
A
Forward current
Tc 25°C, DC
I
F
75
A
Collector power dissipation
Tc 25°C, DC
P
C
460
W
Inverter
Junction temperature
T
j
150
°C
Control supply voltage
V
D
-GND Terminal
V
D
20
V
Input voltage
IN-GND Terminal
V
IN
20
V
Fault output voltage
FO-GND Terminal
V
FO
20
V
Control
Fault output current
FO sink current
I
FO
14
mA
Operating temperature
Tc
20 to 100
°C
Storage temperature range
T
stg
40 to 125
°C
Isolation voltage
AC 1 min
V
ISO
2500
V
Screw torque (terminal)
M4
2
N
m
Module
Screw torque (mounting)
M5
3
N
m
Electrical Characteristics
1. Inverter Stage
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
T
j
25°C
1
Collector cut-off current
I
CEX
V
CE
600 V
T
j
125°C
10
mA
T
j
25°C
1.5
1.8
2.2
Collector-emitter saturation voltage
V
CE (sat)
V
D
15 V
I
C
75 A
V
IN
15 V
0 V
T
j
125°C
2.0
V
Forward voltage
V
F
I
F
75 A, T
j
25°C
1.8
2.2
V
t
on
1.3
2.2
t
c (on)
0.25
t
rr
0.2
t
off
1.1
2.1
Switching time
t
c (off)
V
CC
300 V, I
C
75 A
V
D
15 V, V
IN
15 V
T
j
25°C, Inductive load
0 V
(Note 1)
0.2
s
Note 1: Switching time test circuit and timing chart
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