參數(shù)資料
型號(hào): MIG75J6CSB1W
廠商: Toshiba Corporation
英文描述: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
中文描述: 東芝智能功率模塊IGBT的硅?頻道
文件頁(yè)數(shù): 7/11頁(yè)
文件大?。?/td> 182K
代理商: MIG75J6CSB1W
MIG75J6CSB1W
2002-08-26
7
4. Recommended conditions for application
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Supply voltage
V
CC
P-N Power terminal
300
400
V
Control supply voltage
V
D
V
D
-GND Signal terminal
13.5
15
16.5
V
Carrier frequency
f
c
PWM Control
20
kHz
Dead time
t
dead
Switching time test circuit
(see page.6)
(Note 2)
3
s
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
t
dead
15 V
V
IN
Waveform
V
IN
Waveform
0
15 V
0
t
dead
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