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參數(shù)資料
| 型號： | MIG75J6CSB1W |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 182K |
| 代理商： | MIG75J6CSB1W |
MIG75J6CSB1W
2002-08-26
8
F
F
S
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
C
C
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
C
C
Collector current I
C
(A)
Switching time – I
C
S
Collector current I
C
(A)
Switching time – I
C
Forward voltage V
F
(V)
I
F
– V
F
Forward current I
F
(A)
t
rr
, I
rr
– I
F
P
r
P
r
150
0
0
1
3
4
25
50
125
2
75
100
Common cathode
:Tj 25°C
:Tj 125°C
10
0.01
0
20
100
0.1
1
60
80
Tj 25°C
VCC 300 V
VD 15 V
L-Load
ton
toff
tc (on)
tc (off)
0.03
0.05
0.3
0.5
3
5
40
10
0.01
0
20
100
0.1
1
60
80
Tj 125°C
VCC 300 V
VD 15 V
L-Load
ton
toff
tc (off)
0.03
0.05
0.3
0.5
3
5
40
tc (on)
100
1
0
40
100
10
20
60
80
Common cathode
:Tj 25°C
:Tj 125°C
trr
Irr
30
3
150
0
0
1
3
4
25
50
125
2
75
VD 17 V
Common emitter
Tj 25°C
13 V
15 V
100
150
0
0
1
3
4
25
50
125
2
75
Common emitter
Tj 125°C
100
VD 17 V
13 V
15 V
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