參數(shù)資料
型號(hào)： MIG10J503
廠商： Toshiba Corporation
英文描述： TOSHIBA INTELLIGENT POWER MODULE
中文描述： 東芝智能功率模塊
文件頁(yè)數(shù)： 7/9頁(yè)
文件大小： 112K
代理商： MIG10J503
TENTATIVE
MIG10J503
TOSHIBA CONFIDENTIAL
7
Electrical Characteristics
(Tj
=
25°C)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
V
BB
50
300
400
V
CC
13.5
15
17
Operating Power Supply Voltage
V
BS
13.5
15
17
V
I
BB
V
BB
= 400
V V
IN
= 5
V
arm
1
mA
V
CC
=
15 V V
IN
= 5
V
arm
0.8
.5
mA
I
CC
V
CC
=
15 V V
IN
= 0
V
arm
1.1
.5
mA
V
CC
=
15 V V
IN
= 5
V
arm
330
600
A
Current dissipation
I
BS
V
CC
=
15 V V
IN
= 0
V
arm
470
1000
A
V
IH
V
IN
=
“H”
3.5
2.8
input Voltage
V
IL
V
IN
=
“L”
2.3
1.5
V
V
IN
=
“H”
"L"
0.5
input Voltage hysteresis
V
INhys
V
IN
=
“L”
"H"
0.5
I
IH
V
CC
=
15 V V
IN
=
5V
50
100
200
Input Current
I
IL
V
CC
=
15 V V
IN
=
0 V
75
150
300
μ
A
V
sat
U
V
CC
=
V
BS
15V, I
C
=
10 A, Upper Arm
1.5
2.0
IGBT Saturation Voltage
V
sat
L
V
CC
=
15V, I
C
=
10 A, Lower Arm
1.5
2.0
V
V
F
U
I
F
=
10 A, Upper Arm
1.3
1.9
FRD Forward Voltage
V
F
L
I
F
=
10 A, Lower Arm
1.3
1.9
V
Fault Output Voltage
V
FO
I
FO
=
5 mA,
0.8
1.2
V
Short Current Protection Voltage
V
R
Short Current Protection
0.45
0.5
0.55
V
Short Current Protection delay time
V
R
Short Current Protection
0.5
1
2
μ
s
Over Temperature Protection
TSD
Over Temperature Protection
150
165
200
°C
Over Temperature Protection hys.
TSD
Over Temperature Protection return
20
°C
Under Voltage Protection
V
BS
UVD
Upper Arm Under Voltage Protection
10.0
11.0
12.0
Under Voltage Protection recovery
V
BS
UVR
Upper Arm Under Voltage Protection
recovery
10.5
11.5
12.5
Under Voltage Protection
VccUVD
Lower Arm Under Voltage Protection
10.5
11.5
12.5
Under Voltage Protection recovery
VccUVR
Lower Arm Under Voltage Protection
recovery
11.0
12.0
13.0
V
IGBT turn-on propagation delay time
t
dON
V
BB
=
300 V, IC
= 10
A, Inductance Load
1.3
TBD
IGBT rise time
t
r
V
BB
=
300 V, IC
= 10
A, Inductance Load
0.1
TBD
IGBT turn-on time
t
ON
V
BB
=
300 V, IC
= 10
A, Inductance Load
1.4
TBD
IGBT turn-off propagation delay time
t
dOFF
V
BB
=
300 V, IC
= 10
A, Inductance Load
1.2
TBD
IGBT fall time
t
f
V
BB
=
300 V, IC
= 10
A, Inductance Load
0.1
TBD
IGBT turn-off time
t
OFF
V
BB
=
300 V, IC
= 10
A, Inductance Load
1.3
TBD
μ
s
IGBT vertical arm turn-on, a turn-off
propagation delay time lag
| t
OFF
- t
ON
|
V
BB
=
300 V, IC
= 10
A, Inductance Load
include each Phase
0
300
ns
IGBT vertical arm turn-on, a turn-off
propagation delay time lag
| t
OFF
- t
ON
|
V
BB
=
300 V, IC
= 10
A, Inductance Load
include each Phase
0
300
ns
daed time
t
daed
V
BB
=
300 V, IC
= 10
A, Inductance Load
1
μ
s
FRD reverse recovery time
t
rr
V
BB
=
300 V, I
F
=
10 A
100
ns
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