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參數資料
| 型號： | MIG10J503 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA INTELLIGENT POWER MODULE |
| 中文描述： | 東芝智能功率模塊 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 112K |
| 代理商： | MIG10J503 |
TENTATIVE
INTELLIGENT
MODULE
MIG10J503
TOSHIBA CONFIDENTIAL
1
TOSHIBA
M I G 1 0 J 5 0 3
POWER
MIG10J 503 is an intelligent power module for three-phase
inverter system. The 4th generation low saturation voltage trench
gate IGBT and FRD are connected to a three-phase full bridge
type, and IC by the original high-voltage SOI(silicon-on-insulator)
process drives these directly in response to a PWM signal.
Moreover, since high-voltage level-shifter is built in high-voltage
IC, while being able to perform a direct drive without the
interface with which the upper arm IGBT is insulated, the drive
power supply of an upper arm can be driven with a bootstrap
system, and the simplification of a system is possible.
Furthermore, each lower arm emitter terminal has been
independent so that detection can perform current detection at the time of vector control by current detection
resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and
Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat
resistance is realized.
Feature
The 4th generation trench gate thin wafer NPT IGBT is adopted.
FRD is built in.
The level shift circuit by high-voltage IC is built in.
The simplification of a high side driver power supply is possible by the bootstrap system.
Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection
function are built in.
Short Circuit Protection and Over Temperature Protection state are outputted.
The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at
the time of vector control.
Low thermal resistance by adoption of original high thermal conduction resin.
Since this product is MOS structure, it should be careful of static electricity in the case of handling.
This tentative specification is a development examination stage, and may change the contents without
a preliminary announcement.
Weight:TBD g (Typ.)
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