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參數(shù)資料
| 型號(hào)： | MIG10J503 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA INTELLIGENT POWER MODULE |
| 中文描述： | 東芝智能功率模塊 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | MIG10J503 |
TENTATIVE
MIG10J503
TOSHIBA CONFIDENTIAL
6
Absolute Maximum Rating
(Tj
=
25°C)
Item
Symbol
Rating
Unit
V
BB
450
V
V
BB
(surge)
500
V
V
CC
20
V
Power Supply Voltage
V
BS
20
V
Collector-Emitter Voltage
VCES
600
Each Collector Current (DC)
I
C
10
A
Each Collector Current (PEAK)
I
CP
20
Input Voltage
V
IN
20
V
Fault Output Supply Voltage
V
FO
20
V
Fault Output Current
I
FO
15
mA
PGND-SGND Voltage Difference
V
PGND-SGND
5
Output Voltage Rate of Change
dv/dt
20
k
/
s
Collector Power Dissipation (Per 1 IGBT Chip)
P
C
43
W
Collector Power Dissipation (Per 1 FRD Chip)
P
C
25
W
Operating Temperature
T
OPE
20~100
°C
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
40
~125
°C
Isolation Voltage
60Hz sinusoidal ,AC
V
ISO
2500 (1min)
Vrms
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