參數(shù)資料
型號(hào): MIG100Q6CMB1X
廠商: Toshiba Corporation
英文描述: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
中文描述: 東芝智能功率模塊IGBT的硅?頻道
文件頁數(shù): 9/11頁
文件大?。?/td> 166K
代理商: MIG100Q6CMB1X
MIG100Q6CMB1X
2002-02-27
9
OC – Tc
I
D
(H) – fc
I
D
(L) – fc
Reverse bias SOA
R
th (t)
– tw
Case temperature Tc (°C)
Carrier frequency fc (kHz)
Carrier frequency fc (kHz)
Collector-emitter voltage V
CE
(V)
Pulse width tw (s)
H
D
O
C
C
L
D
T
t
/
150
0
VD 15 V
25
50
75
100
125
0
300
200
100
50
150
250
0
100
25
0
20
40
60
5
10
15
20
VD 15 V
80
120
40
0
200
1400
0
200
400
600
800
1000
1200
80
160
Tj
125°C
VD 15V
OC
0.001
10
10
0.001
0.01
0.1
1
0.01
0.1
Diode stage
Transistor stage
TC 25°C
1
0
30
25
0
VD 15 V
5
10
15
20
5
10
15
20
25
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