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參數(shù)資料
| 型號： | MIG100Q6CMB1X |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 166K |
| 代理商： | MIG100Q6CMB1X |
MIG100Q6CMB1X
2002-02-27
5
2. Control Stage
(T
j
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
High side
I
D (H)
13
17
Control circuit current
Low side
I
D (L)
V
D
15 V
39
51
mA
Input-on signal voltage
V
IN (on)
V
D
15 V
1.4
1.6
1.8
V
Input-off signal voltage
V
IN (off)
V
D
15 V
2.2
2.5
2.8
V
Protection
I
FO (on)
10
12
Fault output current
Normal
I
FO (off)
V
D
15 V, T
j
125°C
0.1
mA
Over current protection trip level
OC
V
D
15 V, T
j
125°C
160
A
Short-circuit current protection trip level
SC
V
D
15 V, T
j
125°C
160
A
Over current cut-off time
t
off (OC)
V
D
15 V
5
s
Trip level
OT
110
118
125
Over temperature
protection
Reset level
OTr
Case temperature
98
°C
Trip level
UV
11.0
12.0
12.5
Control supply under
voltage protection
Reset level
UVr
12.0
12.5
13.0
V
Fault output pulse width
t
FO
V
D
15 V
1
2
3
ms
3. Thermal Resistance
(Tc 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
IGBT
0.130
Junction to case thermal resistance
R
th (j-c)
FWD
0.190
°C/W
Case to fin thermal resistance
R
th (c-f)
Compound is applied
0.013
°C/W
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