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參數資料
| 型號： | MIG100Q6CMB1X |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數： | 7/11頁 |
| 文件大小： | 166K |
| 代理商： | MIG100Q6CMB1X |
MIG100Q6CMB1X
2002-02-27
7
4. Recommended conditions for application
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Supply voltage
V
CC
P-N Power terminal
600
800
V
Control supply voltage
V
D
V
D
-GND Signal terminal
13.5
15
16.5
V
Carrier frequency
fc
PWM Control
20
kHz
Dead time
tdead
Switching time test circuit
(see page.6)
(Note 2)
4
s
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
t
dead
15 V
V
IN
Waveform
V
IN
Waveform
0
15 V
0
t
dead
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