參數(shù)資料
型號: MHV5IC2215NR2
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifier
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 2/16頁
文件大?。?/td> 595K
代理商: MHV5IC2215NR2
2
RF Device Data
Freescale Semiconductor
MHV5IC2215NR2
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Input Power
P
in
12
dBm
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Driver Application
(P
out
= 23 dBm CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, I
DQ1
= 164 mA
Stage 2, 28 Vdc, I
DQ2
= 115 mA
R
θ
JC
9.3
3.5
°
C/W
Test Methodology
Class
Human Body Model (per JESD22-A114)
0 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W-CDMA Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm,
f = 2140 MHz, Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±
5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
23
24
27
dB
Gain Flatness in 60 MHz Bandwidth @ P
out
= 23 dBm
f = 2110-2170 MHz
G
F
0.3
0.5
dB
Adjacent Channel Power Ratio
ACPR
-56
-54
dBc
Input Return Loss
IRL
-12
-10
dB
Typical N-CDMA Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
=
28 Vdc, I
DQ1
= 164 mA, I
DQ2
= 115 mA, P
out
= 23 dBm,
f = 1960
MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@
±
885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
ps
25.5
27.5
29
dB
Gain Flatness @ P
out
= 23 dBm
f = 1930-1990 MHz
G
F
0.3
dB
Adjacent Channel Power Ratio
ACPR
-60
dBc
Input Return Loss
IRL
-12
dB
Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 23 dBm
Delay @ P
out
= 23 dBm Including Output Matching
Φ
0.2
°
Delay
1.5
ns
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
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