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參數(shù)資料
| 型號(hào)： | MGF1951A-01 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | MGF1951A-01 |
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF195
MGF1951111A
A
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(1/4)
PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
High Gain and High Output Power
GLP=9dB, P1dB=13dBm (typ) @ f=12GHz
Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number
Quantity
Supply Form
MGF1951A-01
3.000 pcs/reel
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (Ta=+25°C)
Symbol
Parameter
Rating
Unit
VGDO
Gate to Drain Voltage
-8
V
VGSO
Gate to Source Voltage
-8
V
ID
Drain Current
120
mA
PT
Total Power Dissipation
300
mW
Tch
Channel Temperature
125
°C
Tstg
Storage Temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS (Ta=+25°C)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
Unit
V(BR)GDO Gate to Drain Breakdown Voltage
IG=-30A
-8
-15
—
V
IDSS
Saturated Drain Current
VDS=3V, VGS=0V
35
60
120
mA
VGS(off)
Gate to Source Cut-off Voltage
VDS=3V, ID=300A
-0.3
-1.4
-3.5
V
P1dB
Output Power at
1dB Gain Compression
VDS=3V, ID=30mA, f=12GHz
11
13
—
dBm
GLP
Linear Power Gain
VDS=3V, ID=30mA, Pin=-5dBm,
f=12GHz
79
—
dB
Keep Safety first in your circuit designs!
Mitsubishi
Electric
Corporation
puts
the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage.
Remember
to
give
due
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF1951A | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| MGF1954A | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, MESFET |
| MGF2407A-01 | KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| MGF2407A-11 | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC2407-T03 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF1952A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET (Leadless Ceramic Package) |
| MGF1953A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET |
| MGF1954A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET |
| MGF2407 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| MGF2407A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
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