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參數(shù)資料
| 型號(hào)： | MGF1951A |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | MGF1951A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1951A
Microwave Power MES FET
(Leadless Ceramic Package)
MITSUBISHI
(1/5)
June/2004
June /2004
DESCRIPTION
The MGF1951A is designed for use in S to Ku band power
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
High gain and High P1dB
Glp=9.0dB , P1dB=13dBm (Typ.)
@ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel
3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°C )
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-8
V
VGSO
Gate to source voltage
-8
V
ID
Drain current
120
mA
PT
Total power dissipation
300
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25
°C )
Synbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
Ig=-30
A
-8
-15
--
V
IDSS
Saturated drain current
VGS=0V,VDS=3V
35
60
120
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=300
A
-0.3
-1.4
-3.5
V
P1dB
Output Power at 1dB gain
Compression
VDS=3V,ID=30mA
f=12GHz
11
13
--
dBm
Glp
Linear Power Gain
VDS=3V,ID=30mA
f=12GHz,Pin=-5dBm
7
9
--
dB
Outline Drawing
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Fig.1
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| MGF1954A | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, MESFET |
| MGF2407A-01 | KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| MGF2407A-11 | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC2407-T03 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF2407A-02 | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF1951A_1 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET |
| MGF1951A-01 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:Medium Power Microwave MESFET |
| MGF1952A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET (Leadless Ceramic Package) |
| MGF1953A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET |
| MGF1954A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:Microwave Power MES FET |
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