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參數(shù)資料
| 型號(hào)： | MGF1954A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, MESFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 94K |
| 代理商： | MGF1954A |
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF1954A
Microwave Power MES FET
(Leadless Ceramic Package)
MITSUBISHI
(1/5)
Aug. /2004
Aug./2004
DESCRIPTION
The MGF1954A is designed for use in S to Ku band power
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
High gain and High P1dB
Glp=5.0dB , P1dB=23dBm (Typ.)
@ f=12GHz
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITION
VDS=6V, ID=100mA
ORDERING INFORMATION
Tape & reel
3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-10
V
VGSO
Gate to source voltage
-10
V
ID
Drain current
400
mA
PT
Total power dissipation
1
W
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25
°C )
Synbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
Ig=-100
A
-10
-15
--
V
IDSS
Saturated drain current
VGS=0V,VDS=3V
105
200
400
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=1mA
-0.3
-1.4
-3.5
V
Po
Output Power at 1dB gain
compression
VDS=6V,ID=100mA
f=12GHz
21
23
--
dBm
Glp
Linear Power Gain
VDS=6V,ID=100mA
f=12GHz,Pin=5dBm
3
5
--
dB
Outline Drawing
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Fig.1
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