- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄95933 > MGB15N35CLT4G (ON SEMICONDUCTOR) 15 A, 380 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | MGB15N35CLT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 250K |
| 代理商： | MGB15N35CLT4G |
MGP15N35CL, MGB15N35CL
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
0
40
6
10
4
2
I C,
COLLECT
OR
CURRENT
(AMPS)
0
60
20
30
50
8
13
5
7
10000
1000
100
10
1
1.0
0.5
0.0
1.5
2.0
2.5
0
40
6
10
4
2
I C,
COLLECT
OR
CURRENT
(AMPS)
0
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
0
25
20
15
10
2
1.5
1
5
30
0
0.5
2.5
3
3.5
Figure 3. Transfer Characteristics
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. CollectortoEmitter Saturation
Voltage vs. Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
V
CE
,COLLECT
OR
T
O
EMITTER
VOL
TAGE
(VOL
TS)
I C,
COLLECT
OR
CURRENT
(AMPS)
Figure 5. Capacitance Variation
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 6. Threshold Voltage vs. Temperature
TEMPERATURE (°C)
C,
CAP
ACIT
ANCE
(pF)
THRESHOLD
VOL
TAGE
(VOL
TS)
60
0
120
60
40
20
140
180
50
75
25
0
100
25
125
1.0
3.0
0.5
2.0
0.0
3.5
4.0
VGE = 10.0 V
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
30
50
8
13
5
7
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
TJ = 25°C
TJ = 150°C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
VCE = 10 V
TJ = 25°C
TJ = 150°C
TJ = 40°C
4
4.5
5
1.5
150
VGE = 5.0 V
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
200
80 100
160
50
75
25
0
100
25
125
150
Mean + 4 σ
Mean 4 σ
Mean
IC = 1 mA
Crss
Ciss
Coss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGP15N35CLG | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| MGB15N38CLT4 | 15 A, 350 V, N-CHANNEL IGBT |
| MGC15N43CL | 15 A, 460 V, N-CHANNEL IGBT |
| MGDT100100 | PULSE TRANSFORMER FOR MOSFET GATE DRIVE APPLICATION(S) |
| MGF0805A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGB15N40CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。