參數(shù)資料
型號： MG90V2YS40
元件分類： IGBT 晶體管
英文描述： 90 A, 1700 V, N-CHANNEL IGBT
封裝： 2-109C1A, 7 PIN
文件頁數(shù)： 2/6頁
文件大小： 0K
代理商： MG90V2YS40
MG90V2YS40
2001-08-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0
―
±100
nA
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0
―
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 90 mA, VCE = 5 V
4.0
―
8.0
V
Collector-emitter saturation voltage
VCE (sat)
IC = 90 A,VGE = 15 V
―
3.2
4.5
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
―
13000
―
pF
Turn-on delay time
td (on)
―
0.1
―
Rise-time
tr
―
0.1
―
Turn-on time
ton
―
0.5
―
Turn-off delay time
td (off)
―
0.4
―
Fall time
tf
―
0.5
1.5
Switching time
Turn-off time
toff
Inductive Load
VCC = 900 V
IC = 90 A
VGE = ±15 V
RG = 5.6
(Note 1)
―
1.0
―
s
Forward voltage
VF
IF = 90 A, VGE = 0
―
3.2
4.5
V
Reverse recovery time
trr
IF = 90 A, VGE = 15 V
di / dt = 500 A / s
(Note 1)
―
0.2
0.4
s
Transistor stage
―
0.114
Thermal resistance
Rth (j-c)
Diode stage
―
0.4
°C / W
Note 1: Switching time and reverse recovery time test circuit & timing chart
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