參數(shù)資料
型號： MG90V2YS40
元件分類： IGBT 晶體管
英文描述： 90 A, 1700 V, N-CHANNEL IGBT
封裝： 2-109C1A, 7 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 0K
代理商： MG90V2YS40
MG90V2YS40
2001-08-16
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG90V2YS40
High Power Switching Applications
Motor Control Applications
The electrodes are isolated from case.
High input impedance
Includes a complete half bridge in one package.
Enhancement-mode
High speed : tf = 1.5s (max) (IC = 90A)
trr = 0.3s (max) (IF = 90A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1700
V
Gate-emitter voltage
VGES
±20
V
DC
IC
90
Collector current
1ms
ICP
180
A
DC
IF
90
Forward current
1ms
IFM
180
A
Collector power dissipation (Tc = 25°C)
PC
1100
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
4000
(AC 1minute)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
JEDEC
―
JEITA
―
TOSHIBA
2-109C1A
Weight: 430g (typ.)
Unit: mm
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