參數(shù)資料
型號(hào): MG75Q2YS50
元件分類: IGBT 晶體管
英文描述: 100 A, 1200 V, N-CHANNEL IGBT
封裝: 2-94D4A, 7 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 0K
代理商: MG75Q2YS50
MG75Q2YS50
2001-04-20
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0
±500
nA
Collector cut-off current
ICES
VCE = 1200 V, VGE = 0
1.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 75 mA, VCE = 5 V
3.0
6.0
V
Tj = 25°C
2.8
3.6
Collector-emitter
saturation voltage
VCE (sat)
IC = 75 A,VGE = 15 V
Tj = 125°C
3.1
4.0
V
Input capacitance
Cies
VCE = 10 V, VGE = 0,
f = 1 MHz
8.5
nF
Turn-on delay time
td (on)
0.05
Rise-time
tr
0.05
Turn-on time
ton
0.2
Turn-off delay time
td (off)
0.5
Fall time
tf
0.1
0.3
Switching time
Turn-off time
toff
Inductive load
VCC = 600 V
IC = 75 A
VGE = ±15 V
RG = 16
(Note 1)
0.6
s
Forward voltage
VF
IF = 75 A, VGE = 0
2.4
3.5
V
Reverse recovery time
trr
IF = 75 A, VGE = 10 V
di / dt = 700 A / s
(Note 1)
0.1
0.25
s
Transistor stage
0.2
Thermal resistance
Rth (j-c)
Diode stage
0.47
°C / W
Note 1: Switching time and reverse recovery time test circuit & timing chart
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