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參數(shù)資料
| 型號(hào)： | MG300Q2YS60A |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-11 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MG300Q2YS60A |
MG300Q2YS60A
2004-10-01
8/8
C
o
llect
or
c
u
rre
nt
I C
(
A
)
C
o
llect
or
c
u
rre
nt
I C
(
A
)
Forward current
IF (A)
Irr, trr – IF
R
e
ve
rse
rec
o
ve
ry
ti
me
t rr
(ns
)
R
e
ver
s
e
re
co
v
e
ry
c
u
rr
ent
I
rr
(
A
)
Forward current
IF (A)
Edsw – IF
R
e
ve
rse
rec
o
v
e
ry
lo
ss
E
ds
w
(
m
J
)
Collector-emitter voltage
VCE (V)
C – VCE
C
apaci
tanc
e
C
(p
F)
Collector-emitter voltage
VCE (V)
Safe-operating area
Collector-emitter voltage
VCE (V)
Reverse bias SOA
Pulse width
tw (s)
Rth – tw
R
th
(
j-
c
)
(
°C
/W
)
10
0
50
150
200
300
100
1000
100
250
trr
Irr
Common cathode
VCC = 600 V
RG = 6.8
Tj = 25°C
VGE = ±15 V
Tj = 125°C
100
0.01
0.1
1
10
100
1000
10000
100000
Cies
Coes
Cres
Common emitter
VGE = 0 V
f
= 1 MHz
Tj = 25°C
1
0
10
100
1000
400
800
1200
Tj <
= 125°C
RG = 6.8
VGE = ±15 V
0.1
0
50
150
250
300
1
10
100
200
Common cathode
VCC = 600 V
RG = 6.8
Tj = 25°C
VGE = ±15 V
Tj = 125°C
0.001
0.01
0.1
1
10
0.01
0.1
1
Diode stage
Transistor stage
Tc
= 25°C
3
1
10
100
1000
10000
10
100
1000
IC max (continuous)
IC max (pulsed)*
*: Single
nonrepetitive
pulse Tc
=
25°C
Curves must
be derated
linearly with
increase in
temperature.
DC
operation
1 ms
50
s
100
s
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