參數(shù)資料
型號: MG300Q2YS60A
元件分類: IGBT 晶體管
英文描述: 300 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-11
文件頁數(shù): 7/8頁
文件大?。?/td> 0K
代理商: MG300Q2YS60A
MG300Q2YS60A
2004-10-01
7/8
SW
tim
e
(n
s
)
S
W
l
o
ss
E
on
,E
of
f
(m
J)
Forward voltage
VF (V)
IF – VF
F
o
rw
a
rd
cu
rr
e
n
t
I
F
(A)
Gate
-e
mi
tt
er
v
o
ltag
e
V
GE
(
V
)
Charge
QG (nC)
VCE, VGE – QG
Col
lect
o
r-
e
m
itte
rv
o
lt
a
ge
V
CE
(V
)
Gate resistance
RG ()
SW time – RG
SW
tim
e
(n
s
)
Gate resistance
RG ()
Eon, Eoff – RG
Collector current
IC (A)
SW time – IC
Collector current
IC (A)
Eon, Eoff – IC
S
W
l
o
ss
E
on
,E
of
f
(m
J
)
0
500
1000
1500
2500
200
400
600
800
1000
0
4
8
12
16
20
2000
VCE = 0 V
200 V
600 V
400 V
Common emitter
RL = 2
Tj = 25°C
10
5
0
10
15
20
25
1000
100
10000
toff
tf
tr
td (on)
ton
td (off)
Common emitter
VCC = 600 V
IC = 300 A
Tj = 25°C
VGE = ±15 V
Tj = 125°C
10
0
100
1000
5
10
15
20
25
Eoff
Eon
Common emitter
VCC = 600 V
IC = 300 A
Tj = 25°C
VGE = ±15 V
Tj = 125°C
10
0
50
150
250
300
100
1000
10000
100
200
Common emitter
VCC = 600 V
RG = 6.8
Tj = 25°C
VGE = ±15 V
Tj = 125°C
ton
td (on)
toff
td (off)
tf
tr
1
0
50
150
200
300
10
100
Eoff
Eon
Common emitter
VCC = 600 V
RG = 6.8
Tj = 25°C
VGE = ±15 V
Tj = 125°C
100
250
0
1
5
100
300
400
500
2
3
4
200
600
125°C
Tj = 25°C
40°C
Common cathode
VGE = 0 V
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