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參數(shù)資料
| 型號(hào)： | MCM69R618 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 1M Synchronous Late Write Fast SRAM(1M位同步遲寫、快速靜態(tài)RAM) |
| 中文描述： | 100萬同步后寫入快速靜態(tài)存儲(chǔ)器（100萬位同步遲寫，快速靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 5/20頁 |
| 文件大小： | 141K |
| 代理商： | MCM69R618 |
MCM69R536
MCM69R618
5
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to VSS, See Note 1)
Rating
Symbol
Value
Unit
Core Supply Voltage
VDD
– 0.5 to + 4.6
V
Output Supply Voltage
VDDQ
– 0.5 to VDD + 0.5
V
Voltage On Any Pin
Vin
– 0.5 to VDD + 0.5
V
Input Current (per I/O)
Iin
±
50
mA
Output Current (per I/O)
Iout
±
70
mA
Power Dissipation (See Note 2)
PD
—
W
Operating Temperature
TA
0 to + 70
°
C
Temperature Under Bias
Tbias
–10 to + 85
°
C
Storage Temperature
Tstg
– 55 to + 125
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. Power dissipation capability will be dependent upon package characteristics and use
environment. See enclosed thermal impedance data.
PBGA PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Notes
Junction to Ambient (Still Air)
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JB
R
θ
JC
59
°
C/W
1, 2
Junction to Ambient (@200 ft/min)
Single Layer Board
44
°
C/W
1, 2
Junction to Ambient (@200 ft/min)
Four Layer Board
28
°
C/W
Junction to Board (Bottom)
18
°
C/W
3
Junction to Case (Top)
9
°
C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC–883
Method 1012.1).
CLOCK TRUTH TABLE
K
ZZ
SS
SW
SBa
SBb
SBc
SBd
DQ (n)
DQ (n+1)
Mode
L – H
L
L
H
X
X
X
X
High–Z
Dout 0–35
Din 0–8
Din 9–17
Din 18–26
Din 27–35
Din 0–35
High–Z
Read Cycle All Bytes
L – H
L
L
L
L
H
H
H
High–Z
Write Cycle 1st Byte
L – H
L
L
L
H
L
H
H
High–Z
Write Cycle 2nd Byte
L – H
L
L
L
H
H
L
H
High–Z
Write Cycle 3rd Byte
L – H
L
L
L
H
H
H
L
High–Z
Write Cycle 4th Byte
L – H
L
L
L
L
L
L
L
High–Z
Write Cycle All Bytes
L – H
L
L
L
H
H
H
H
High–Z
Abort Write Cycle
L – H
L
H
H
X
X
X
X
High–Z
High–Z
Deselect Cycle
L – H
L
H
L
X
X
X
X
High–Z
High–Z
Deselect Cycle
X
H
X
X
X
X
X
X
High–Z
High–Z
Sleep Mode
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
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