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參數(shù)資料
| 型號： | MCM63Z819 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 4M Bit Synchronous Fast Static RAM(4M位同步遲寫快速靜態(tài)RAM) |
| 中文描述： | 4分位同步快速靜態(tài)存儲器（4分位同步遲寫快速靜態(tài)內存） |
| 文件頁數(shù)： | 10/20頁 |
| 文件大小： | 136K |
| 代理商： | MCM63Z819 |
MCM63Z737 MCM63Z819
10
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(See Note 1)
Rating
Symbol
Value
Unit
Notes
Power Supply Voltage
VDD
VDDQ
Vin, Vout
–0.5 to 4.6
V
I/O Supply Voltage
VSS – 0.5 to VDD
–0.5 to VDD + 0.5
V
2
Input Voltage Relative to VSS for
Any Pin Except VDD
V
2
Input Voltage (Three State I/O)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
2
Output Current (per I/O)
Iout
PD
Tbias
Tstg
±
20
mA
Package Power Dissipation
1.3
W
3
Temperature Under Bias
–10 to 85
°
C
Storage Temperature
–55 to 125
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED
OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS
Thermal Resistance
Symbol
Max
Unit
Notes
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
R
θ
JA
40
25
°
C/W
1, 2
Junction to Board (Bottom)
R
θ
JB
R
θ
JC
17
°
C/W
3
Junction to Case (Top)
9
°
C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883
Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
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| MCM63Z819TQ11 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z819TQ11R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z819TQ15 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z819TQ15R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z834 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 36 and 512K x 18 Bit ZBT Fast Static RAM |
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