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參數(shù)資料
| 型號(hào)： | MCM63Z819 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 4M Bit Synchronous Fast Static RAM(4M位同步遲寫快速靜態(tài)RAM) |
| 中文描述： | 4分位同步快速靜態(tài)存儲(chǔ)器（4分位同步遲寫快速靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 136K |
| 代理商： | MCM63Z819 |
MCM63Z737 MCM63Z819
1
MOTOROLA FAST SRAM
Motorola, Inc. 2000
128K x 36 and 256K x 18 Bit
Flow–Through ZBT
RAM
Synchronous Fast Static RAM
The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide
Zero Bus Turnaround
. The ZBT RAM allows 100% use of bus cycles during
back–to–back read/write and write/read cycles. The MCM63Z737 (organized as
128K words by 36 bits) and the MCM63Z819 (organized as 256K words by 18
bits) are fabricated in Motorola’s high performance silicon gate CMOS
technology. This device integrates input registers, a 2–bit address counter, and
high speed SRAM onto a single monolithic circuit for reduced parts count in
communication applications. Synchronous design allows precise cycle control
with the use of an external clock (CK). CMOS circuitry reduces the overall power
consumption of the integrated functions for greater reliability.
Addresses (SA), data inputs (DQ), and all control signals except output enable
(G) and linear burst order (LBO) are clock (CK) controlled through positive–
edge–triggered noninverting registers.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (CK) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
3.3 V LVTTL and LVCMOS Compatible
MCM63Z737/MCM63Z819–10 = 10 ns Access/12 ns Cycle (83 MHz)
MCM63Z737/MCM63Z819–11 = 11 ns Access/15 ns Cycle (66 MHz)
MCM63Z737/MCM63Z819–15 = 15 ns Access/20 ns Cycle (50 MHz)
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Single–Cycle Deselect
Byte Write Control
ADV Controlled Burst
100–Pin TQFP Package
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by
Micron Technology, Inc. and Motorola, Inc.
Order this document
by MCM63Z737/D
SEMICONDUCTOR TECHNICAL DATA
MCM63Z737
MCM63Z819
TQ PACKAGE
TQFP
CASE 983A–01
REV 5
1/14/00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCM63Z737 | 4M Bit Synchronous Fast Static RAM(4M位同步遲寫快速靜態(tài)RAM) |
| MCM67Q909 | 512Kx9 Bit Synchronous Fast Static RAM(512Kx9位同步快速靜態(tài)RAM) |
| MCM6946 | 512Kx8 Bit Static Random Access Memory(512Kx8位靜態(tài)RAM) |
| MCM6949 | 1Mx4 Bit Static Random Access Memory(1Mx4位靜態(tài)RAM) |
| MCM69R618 | 1M Synchronous Late Write Fast SRAM(1M位同步遲寫、快速靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM63Z819TQ11 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z819TQ11R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z819TQ15 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z819TQ15R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM |
| MCM63Z834 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:256K x 36 and 512K x 18 Bit ZBT Fast Static RAM |
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