參數(shù)資料
型號(hào): MCIMX258CVM4
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 400 MHz, MICROPROCESSOR, PBGA400
封裝: 17 X 17 MM, 0.80 MM PITCH, ROHS COMPLIANT, PLASTIC, MAPBGA-400
文件頁數(shù): 82/154頁
文件大?。?/td> 1498K
代理商: MCIMX258CVM4
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Freescale Semiconductor
33
1.Maximum condition for tpr, tpo, and tpv: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpr, tpo, and tpv: bcs
model, 1.3 V, IO 3.6 V and –40 °C. Input transition time from core is 1ns (20%–80%).
2. Minimum condition for tps: wcs model, 1.1 V, IO 3.0 V and 105 °C. tps is measured between VIL to VIH for rising edge and
between VIH to VIL for falling edge.
3. Maximum condition for tdit: bcs model, 1.3 V, IO 3.6 V and –40 °C.
4. Maximum condition for tpi and trfi: wcs model, 1.1 V, IO 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
IO 3.6 V and –40 °C. Input transition time from pad is 5ns (20%–80%).
5. Hysteresis mode is recommended for input with transition time greater than 25 ns.
3.6.3
DDR I/O AC Parameters
The DDR pad type is configured by the IOMUXC_SW_PAD_CTL_GRP_DDRTYPE register (see
Chapter 4, “External Signals and Pin Multiplexing,” in the i.MX25 Multimedia Applications Processor
Reference Manual).
3.6.3.1
DDR_TYPE = 00 Standard Setting I/O AC Parameters and Requirements
Table 24 shows AC parameters for mobile DDR I/O. These settings are suitable for mDDR and DDR2
1.8V (
± 5%) applications.
Input Pad Propagation Delay without
Hysteresis, 50%–50%
tpi
1.6pF
0.729/0.458 0.97/0.0649
1.404/0.97
ns
4
Input Pad Propagation Delay with Hysteresis,
50%–50%
tpi
1.6pF
1.203/0.938 1.172/1.187 1.713/1.535
ns
Input Pad Propagation Delay without
Hysteresis, 40%–60%
tpi
1.6pF
0.879/0.977
1.434/1.12
1.854/1.427
ns
Input Pad Propagation Delay with Hysteresis,
40%–60%
tpi
1.6pF
1.353/1.457 1.637/1.659 2.163/1.991
ns
Input Pad Transition Times without Hysteresis
trfi
1.6pF
0.16/0.12
0.23/0.18
0.33/0.29
ns
Input Pad Transition Times with Hysteresis
trfi
1.6pF
0.16/0.13
0.22/0.18
0.33/0.29
ns
Maximum Input Transition Times
trm
ns
5
Table 24. AC Parameters for Mobile DDR I/O
Parameter
Symbol
Load
Condition
Min.
Rise/Fall
Typ.
Max.
Rise/Fall
Units
Notes
Duty cycle
Fduty
40
50
60
%
Clock frequency
f
133
MHz
1
Output pad transition times (max. drive)
tpr
25 pF
50 pF
0.52/0.51
0.98/0.96
0.79/0.72
1.49/1.34
1.25/1.09
2.31/1.98
ns
1
Output pad transition times (high drive)
tpr
25 pF
50 pF
1.13/1.10
2.15/2.10
1.74/1.55
3.28/2.92
2.71/2.30
5.11/4.31
ns
Output pad transition times (standard drive)
tpr
25 pF
50 pF
2.26/2.19
4.30/4.18
3.46/3.07
6.59/5.79
5.39/4.56
10.13/8.55
ns
Table 23. Fast I/O AC Parameters for OVDD = 3.03.6 V (continued)
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