MCF532x ColdFire Microprocessor Data Sheet, Rev. 5 Electrical Characteristics Fr" />
參數(shù)資料
型號： MCF5329CVM240J
廠商： Freescale Semiconductor
文件頁數(shù)： 10/50頁
文件大小： 0K
描述： IC MPU RISC 240MHZ 256MAPBGA
標(biāo)準(zhǔn)包裝： 90
系列： MCF532x
核心處理器： Coldfire V3
芯體尺寸： 32-位
速度： 240MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，I²C，SPI，SSI，UART/USART，USB，USB OTG
外圍設(shè)備： DMA，LCD，PWM，WDT
輸入/輸出數(shù)： 94
程序存儲器類型： ROMless
RAM 容量： 32K x 8
電壓 - 電源 (Vcc/Vdd)： 1.4 V ~ 3.6 V
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 256-LBGA
包裝： 托盤
MCF532x ColdFire Microprocessor Data Sheet, Rev. 5
Electrical Characteristics
Freescale Semiconductor
18
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
5.3
ESD Protection
5.4
DC Electrical Specifications
Table 6. ESD Protection Characteristics1, 2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
2 A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
HBM
2000
V
Table 7. DC Electrical Specifications
Characteristic
Symbol
Min
Max
Unit
Core Supply Voltage
IVDD
1.4
1.6
V
PLL Supply Voltage
PLLVDD
1.4
1.6
V
CMOS Pad Supply Voltage
EVDD
3.0
3.6
V
SDRAM and FlexBus Supply Voltage
Mobile DDR/Bus Pad Supply Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDVDD
1.70
2.25
3.0
1.95
2.75
3.6
V
USB Supply Voltage
USBVDD
3.0
3.6
V
CMOS Input High Voltage
EVIH
2EVDD +0.3
V
CMOS Input Low Voltage
EVIL
VSS – 0.3
0.8
V
CMOS Output High Voltage
IOH = –5.0 mA
EVOH
EVDD – 0.4
—
V
CMOS Output Low Voltage
IOL = 5.0 mA
EVOL
—0.4
V
SDRAM and FlexBus Input High Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDVIH
1.35
1.7
2
SDVDD + 0.3
V
SDRAM and FlexBus Input Low Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDVIL
VSS – 0.3
0.45
0.8
V
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