參數(shù)資料
型號(hào)： MCF5232CAB80
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： Integrated Microprocessor Hardware Specification
中文描述： 集成的微處理器，硬件規(guī)格
文件頁數(shù)： 25/46頁
文件大小： 988K
代理商： MCF5232CAB80
Preliminary Electrical Characteristics
MCF523x Integrated Microprocessor Hardware Specification, Rev. 2
Freescale Semiconductor
25
7.3
DC Electrical Specifications
3
Thermal resistance between the die and the printed circuit board in conformance with JEDEC JESD51-8. Board
temperature is measured on the top surface of the board near the package.
Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1).
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is
written in conformance with Psi-JT.
At 100MHz.
4
5
6
The average chip-junction temperature (T
J
) in
°
C can be obtained from:
(1)
Where:
T
A
= Ambient Temperature,
°
C
Θ
JMA
= Package Thermal Resistance, Junction-to-Ambient,
°
C/W
P
D
= P
INT
+
P
I/O
P
INT
= I
DD
×
V
DD
, Watts - Chip Internal Power
P
I/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications P
I/O
<
P
INT
and can be ignored. An approximate relationship between P
D
and T
J
(if P
I/O
is neglected) is:
273
°
C
+
(
÷
=
(2)
Solving equations 1 and 2 for K gives:
K = P
D
×
(T
A
+ 273
°
C) +
Θ
JMA
×
P
D 2
(3)
where K is a constant pertaining to the particular part. K can be determined from equation (3)
by measuring P
D
(at equilibrium) for a known T
A
. Using this value of K, the values of P
D
and
T
J
can be obtained by solving equations (1) and (2) iteratively for any value of T
A
.
Table 9. DC Electrical Specifications
1
Characteristic
Symbol
Min
Typical
Max
Unit
Core Supply Voltage
V
DD
1.4
—
1.6
V
Pad Supply Voltage
OV
DD
3
—
3.6
V
Input High Voltage
V
IH
0.7
×
OV
DD
—
3.65
V
Input Low Voltage
V
IL
V
SS
– 0.3
0.06
×
OV
DD
—
0.35
×
OV
DD
V
Input Hysteresis
V
HYS
—
—
mV
Input Leakage Current
V
in
= V
DD
or V
SS
, Input-only pins
I
in
–1.0
—
1.0
μ
A
High Impedance (Off-State) Leakage Current
V
in
= V
DD
or V
SS
, All input/output and output pins
I
OZ
–1.0
—
1.0
μ
A
T
J
T
A
P
D
Θ
JMA
×
(
)
+
=
P
D
K
T
J
)
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