參數(shù)資料
型號(hào)： MC9S12DG256B
廠商： 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述： device made up of standard HCS12 blocks and the HCS12 processor core
中文描述： 設(shè)備組成水平的HCS12塊和HCS12的處理器核心
文件頁數(shù)： 101/128頁
文件大?。?/td> 2560K
代理商： MC9S12DG256B
101
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
NVMOSC
is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
NVMOP
.
The minimum program and erase times shown in
Table A-11
are calculated for maximum f
NVMOP
and
maximum f
bus
. The maximum times are calculated for minimum f
NVMOP
and a f
bus
of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
NVMOP
and can be calculated according to the following formula.
t
swpgm
f
NVMOP
A.3.1.2 Burst Programming
ThisappliesonlytotheFlashwhereupto32wordsinarowcanbeprogrammedconsecutivelyusingburst
programming by keeping the command pipeline filled. The time to program a consecutive word can be
calculated as:
The time to program a whole row is:
Burst programming is more than 2 times faster than single word programming.
9
--------1
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MC9S12DG256BCFU 功能描述:16位微控制器 - MCU 16 Bit 25MHz RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MC9S12DG256BCPV 功能描述:IC MCU 256K FLASH 25MHZ 112-LQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:HCS12 標(biāo)準(zhǔn)包裝:250 系列:56F8xxx 核心處理器:56800E 芯體尺寸:16-位 速度:60MHz 連通性:CAN，SCI，SPI 外圍設(shè)備:POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):21 程序存儲(chǔ)器容量:40KB（20K x 16） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:6K x 16 電壓 - 電源 (Vcc/Vdd):2.25 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 6x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:48-LQFP 包裝:托盤 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
MC9S12DG256BMFU 功能描述:16位微控制器 - MCU 16 Bit 25MHz RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
MC9S12DG256BMPV 功能描述:IC MCU 256K FLASH 25MHZ 112-LQFP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:HCS12 標(biāo)準(zhǔn)包裝:250 系列:56F8xxx 核心處理器:56800E 芯體尺寸:16-位 速度:60MHz 連通性:CAN，SCI，SPI 外圍設(shè)備:POR，PWM，溫度傳感器，WDT 輸入/輸出數(shù):21 程序存儲(chǔ)器容量:40KB（20K x 16） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:6K x 16 電壓 - 電源 (Vcc/Vdd):2.25 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 6x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:48-LQFP 包裝:托盤 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
MC9S12DG256BVPV 功能描述:16位微控制器 - MCU 16 Bit 25MHz RoHS:否 制造商:Texas Instruments 核心:RISC 處理器系列:MSP430FR572x 數(shù)據(jù)總線寬度:16 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:8 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:VQFN-40 安裝風(fēng)格:SMD/SMT
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