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參數(shù)資料
| 型號(hào)： | MBRD660CTTRR |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 112K |
| 代理商： | MBRD660CTTRR |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94314
2
Revision: 14-Aug-08
MBRD650CTPbF/MBRD660CTPbF
Vishay High Power Products Schottky Rectifier, 2 x 3 A
Note
(1) Pulse width < 300 s, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
3 A
TJ = 25 °C
0.7
V
6 A
0.9
3 A
TJ = 125 °C
0.65
6 A
0.85
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
0.1
mA
TJ = 125 °C
15
Typical junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
145
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
5.0
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/s
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ (1), TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
per leg
RthJC
DC operation
See fig. 4
6
°C/W
per device
3
Maximum thermal resistance,
junction to ambient
RthJA
80
Approximate weight
0.3
g
0.01
oz.
Marking device
Case style D-PAK (similar to TO-252AA)
MBRD650CT
MBRD660CT
dP
tot
dT
J
-------------
1
R
thJA
--------------
<
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