參數(shù)資料
型號: MBRD660CTTRR
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 整流器
英文描述: 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
封裝: DPAK-3
文件頁數(shù): 1/6頁
文件大?。?/td> 112K
代理商: MBRD660CTTRR
Document Number: 94314
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08
1
Schottky Rectifier, 2 x 3 A
MBRD650CTPbF/MBRD660CTPbF
Vishay High Power Products
FEATURES
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for AEC Q101 level
DESCRIPTION
The MBRD650CTPbF, MBRD660CTPbF surface mount,
center tap, Schottky rectifier series has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 3 A
VR
50/60 V
Base
common
cathode
Common
cathode
2
4
1
3
Anode
D-PAK
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
IF(AV)
Rectangular waveform
6
A
VRRM
50/60
V
IFSM
tp = 5 s sine
490
A
VF
3 Apk, TJ = 125 °C (per leg)
0.65
V
TJ
Range
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
MBRD650CTPbF
MBRD660CTPbF
UNITS
Maximum DC reverse voltage
VR
50
60
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV)
50 % duty cycle at TC = 128 °C, rectangular waveform
3.0
A
per device
6
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 s sine or 3 s rect. pulse
Following any rated load
condition and with rated
VRRM applied
490
10 ms sine or 6 ms rect. pulse
75
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1 A, L = 12 mH
6
mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 s
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.6
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
相關(guān)PDF資料
PDF描述
MBRD660CT 3 A, 60 V, SILICON, RECTIFIER DIODE, TO-252AA
MBRF10100CT-E3/45 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10100CT2 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10100D 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF10200D 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
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