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參數(shù)資料
| 型號： | MBRF10100CT2 |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MBRF10100CT2 |
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
4. Device mounted on 135mm x 135mm x 8mm Al Plate.
MBRF10100CT2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.70 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 100 Volts
FORWARD CURRENT - 10 Amperes
10
120
10000
VRMS
VDC
VRRM
I(AV)
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
TJ
Operating Temperature Range
C
TSTG
Storage Temperature Range
C
Typical Thermal Resistance (Note 3, 4)
R0JC
C/W
CJ
Typical Junction Capacitance,
per element (Note 2)
pF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =125 C
mA
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
Maximum Forward
Voltage, (Note 1)
V
Voltage Rate of Change (Rated VR)
@IF=5A
@IF=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at Tc=120 C (See Fig.1)
-55 to +150
-55 to +175
3.0
0.1
15
0.85
0.75
0.95
0.85
180
MBRF10100CT2
100
70
100
TJ =25 C
TJ =125 C
TJ =25 C
TJ =125 C
V/us
SEMICONDUCTOR
LITE-ON
REV. 0, Nov-2008, KTHC72
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
PIN 1
PIN 3
PIN 2
@TJ =25 C
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